REVISED FUNNEL CALCULATIONS FOR HEAVY-PARTICLES WITH HIGH DE/DX

被引：22

作者：

OLDHAM, TR

MCLEAN, FB

HARTMAN, JM

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1986年 / 33卷 / 06期

关键词：

D O I：

10.1109/TNS.1986.4334657

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1646 / 1650

页数：5

共 10 条

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OLDHAM, TR .

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[3] MEASUREMENTS OF ALPHA-PARTICLE-INDUCED CHARGE IN GAAS DEVICES [J].

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[4] CHARGE COLLECTION MEASUREMENTS ON GAAS DEVICES FABRICATED ON SEMI-INSULATING SUBSTRATES [J].

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[5] A FIELD-FUNNELING EFFECT ON THE COLLECTION OF ALPHA-PARTICLE-GENERATED CARRIERS IN SILICON DEVICES [J].

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[7]

HSIEH CM, 1981, APR P IEEE INT REL P, P38

[8]

MCLEAN FB, 1982, IEEE T NUCL SCI, V29, P2018

[9] CHARGE COLLECTION MEASUREMENTS FOR HEAVY-IONS INCIDENT ON N-TYPE AND P-TYPE SILICON [J].

OLDHAM, TR ;

MCLEAN, FB .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (06) :4493-4500

[10] CHARACTERISTICS OF SEU CURRENT TRANSIENTS AND COLLECTED CHARGE IN GAAS AND SI DEVICES [J].

SHANFIELD, Z ;

MORIWAKI, MM ;

DIGBY, WM ;

SROUR, JR .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1985, 32 (06) :4104-4109

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