CHARACTERISTICS OF SEU CURRENT TRANSIENTS AND COLLECTED CHARGE IN GAAS AND SI DEVICES

被引：10

作者：

SHANFIELD, Z ^{[1
]}

MORIWAKI, MM ^{[1
]}

DIGBY, WM ^{[1
]}

SROUR, JR ^{[1
]}

机构：

[1] UNIV CALIF LAWRENCE LIVERMORE NATL LAB, LIVERMORE, CA 94550 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1985年 / 32卷 / 06期

关键词：

D O I：

10.1109/TNS.1985.4334076

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：4104 / 4109

页数：6

共 14 条

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FLESNER, LD .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) :1502-1507

[2]

FLESNER LD, COMMUNICATION

[3] NUMERICAL-STUDIES OF CHARGE COLLECTION AND FUNNELING IN SILICON DEVICE [J].

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KRESKOVSKY, JP ;

WEINBERG, BC .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) :1161-1166

[4] MEASUREMENTS OF ALPHA-PARTICLE-INDUCED CHARGE IN GAAS DEVICES [J].

HOPKINS, MA ;

SROUR, JR .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (06) :4457-4463

[5] CHARGE COLLECTION MEASUREMENTS ON GAAS DEVICES FABRICATED ON SEMI-INSULATING SUBSTRATES [J].

HOPKINS, MA ;

SROUR, JR .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) :1116-1120

[6] A FIELD-FUNNELING EFFECT ON THE COLLECTION OF ALPHA-PARTICLE-GENERATED CARRIERS IN SILICON DEVICES [J].

HSIEH, CM ;

MURLEY, PC ;

OBRIEN, RR .

ELECTRON DEVICE LETTERS, 1981, 2 (04) :103-105

[7]

HSIEH CM, 1983, IEEE T ELECTRON DEV, V30, P686, DOI 10.1109/T-ED.1983.21190

[8]

HSIEH CM, 1981, APR P IEEE INT REL P, P38

[9] ALPHA-PARTICLE-INDUCED FIELD AND ENHANCED COLLECTION OF CARRIERS [J].

HU, C .

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[10]

MCLEAN FB, 1982, IEEE T NUCL SCI, V29, P2018

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