TRANSIENT RADIATION EFFECTS IN GAAS DEVICES - BULK CONDUCTION AND CHANNEL MODULATION PHENOMENA IN D-MESFET, E-JFET, AND N+-SI-N+ STRUCTURES

被引：18

作者：

FLESNER, LD

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1984年 / 31卷 / 06期

关键词：

D O I：

10.1109/TNS.1984.4333538

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1502 / 1507

页数：6

共 11 条

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[2]

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[3] STOICHIOMETRY-CONTROLLED COMPENSATION IN LIQUID ENCAPSULATED CZOCHRALSKI GAAS [J].

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[4]

HOLT DB, 1974, QUANTITATIVE SCANNIN, P213

[5]

KOCOT C, 1982, IEEE T ELECTRON DEV, V29, P1059

[6]

LEE CP, 1982, IEEE GAAS IC S, P169

[7]

NEDOLUHA AK, COMMUNICATION

[8]

SIMONS M, 1981, J APPL PHYS, V52, P663

[9]

SZE SM, 1969, PHYSICS SEMICONDUCTO, P104

[10] THE EFFECTS OF TRANSIENT RADIATION ON GAAS SCHOTTKY DIODE FET LOGIC-CIRCUITS [J].

WALTON, ER ;

ANDERSON, WT ;

ZUCCA, R ;

NOTTHOFF, JK .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (06) :4178-4182

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