TRANSIENT RADIATION EFFECTS AT X-BAND IN GAAS-FETS AND ICS

被引：9

作者：

ANDERSON, WT

BINARI, SC

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1983年 / 30卷 / 06期

关键词：

D O I：

10.1109/TNS.1983.4333109

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：4205 / 4208

页数：4

相关论文

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[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (11) : 6630 - 6636
[5] TRANSIENT-RESPONSE OF GAAS ICS TO IONIZING-RADIATION
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[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1979, 26 (06) : 4744 - 4749
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