TRANSIENT RADIATION STUDY OF GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS IMPLANTED IN CR-DOPED AND UNDOPED SUBSTRATES

被引：21

作者：

SIMONS, M ^{[1
]}

KING, EE ^{[1
]}

ANDERSON, WT ^{[1
]}

DAY, HM ^{[1
]}

机构：

[1] USN,RES LAB,WASHINGTON,DC 20375

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 11期

关键词：

D O I：

10.1063/1.328431

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

22

引用

收藏

页码：6630 / 6636

页数：7

相关论文

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