TRANSIENT-RESPONSE OF GAAS ICS TO IONIZING-RADIATION

Transient responses of GaAs E-JFET planar integrated circuits caused by a 25 ns wide ionizing radiation pulse from a LINAC were measured. Present technology circuits with 2.5 pm channel length devices have a measured logic upset level of about 1 x 1010 rad(GaAs)/s and a survival dose rate of approximately I x 1011 rad(GaAs)/s. A theoretical analysis for logic upset dose rate and a correlation of experimental results with theory is presented. for E-JFET devices with a channel length of I pm, a logic upset dose rate of I x 1011 rad(GaAs)/s is predicted. Copyright © 1979 by The Institute of Electrical and Electronics Engineers, Inc.