TRANSIENT RESPONSE OF TRANSISTORS + DIODES TO IONIZING RADIATION

[1] BOUCHARD GH, 1962, CP621229 AIEE SUMM G

[2] CALDWELL RS, 1963, COMMUNICATIONS ELECT

[3] The temporal increase of photoelectrical conductivity [J]. ZEITSCHRIFT FUR PHYSIK, 1921, 6 : 248 - 256

[4] JORDAN AG, 1960, IRE T ELECTRONIC DEV, VED67, P242

[5] ELECTRON MULTIPLICATION IN SILICON AND GERMANIUM [J]. PHYSICAL REVIEW, 1953, 91 (05): : 1079 - 1084

[6] THE N-P-N JUNCTION AS A MODEL FOR SECONDARY PHOTOCONDUCTIVITY [J]. PHYSICAL REVIEW, 1951, 84 (04): : 833 - 835

[7] Rosenberg C., 1963, IEEE T NUCL SCI, V10, P149

[8] SHIVE JN, 1959, SEMICONDUCTOR DEVICE

[9] INJECTED CURRENT CARRIER TRANSPORT IN A SEMI-INFINITE SEMICONDUCTOR AND THE DETERMINATION OF LIFETIMES AND SURFACE RECOMBINATION VELOCITIES [J]. JOURNAL OF APPLIED PHYSICS, 1955, 26 (04) : 380 - 391

[10] [No title captured]

[1] BOUCHARD GH, 1962, CP621229 AIEE SUMM G

[2] CALDWELL RS, 1963, COMMUNICATIONS ELECT

[3] The temporal increase of photoelectrical conductivity [J]. ZEITSCHRIFT FUR PHYSIK, 1921, 6 : 248 - 256

[4] JORDAN AG, 1960, IRE T ELECTRONIC DEV, VED67, P242

[5] ELECTRON MULTIPLICATION IN SILICON AND GERMANIUM [J]. PHYSICAL REVIEW, 1953, 91 (05): : 1079 - 1084

[6] THE N-P-N JUNCTION AS A MODEL FOR SECONDARY PHOTOCONDUCTIVITY [J]. PHYSICAL REVIEW, 1951, 84 (04): : 833 - 835

[7] Rosenberg C., 1963, IEEE T NUCL SCI, V10, P149

[8] SHIVE JN, 1959, SEMICONDUCTOR DEVICE

[9] INJECTED CURRENT CARRIER TRANSPORT IN A SEMI-INFINITE SEMICONDUCTOR AND THE DETERMINATION OF LIFETIMES AND SURFACE RECOMBINATION VELOCITIES [J]. JOURNAL OF APPLIED PHYSICS, 1955, 26 (04) : 380 - 391

[10] [No title captured]