CHARGE COLLECTION MEASUREMENTS ON GAAS DEVICES FABRICATED ON SEMI-INSULATING SUBSTRATES

被引：19

作者：

HOPKINS, MA ^{[1
]}

SROUR, JR ^{[1
]}

机构：

[1] NORTHROP RES & TECHNOL CTR,PALOS VERDES PENINSULA,CA 90274

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1984年 / 31卷 / 06期

关键词：

D O I：

10.1109/TNS.1984.4333466

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1116 / 1120

页数：5

共 15 条

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[2] MEASUREMENTS OF ALPHA-PARTICLE-INDUCED CHARGE IN GAAS DEVICES [J].

HOPKINS, MA ;

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IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (06) :4457-4463

[3] A FIELD-FUNNELING EFFECT ON THE COLLECTION OF ALPHA-PARTICLE-GENERATED CARRIERS IN SILICON DEVICES [J].

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[6]

LEHOVEC K, UNPUB SOLID STATE EL

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LOOK DC, 1983, SEMICONDUCT SEMIMET, V19, pCH2

[9]

MCLEAN FB, 1982, IEEE T NUCL SCI, V29, P2018

[10] CHARGE COLLECTION MEASUREMENTS FOR HEAVY-IONS INCIDENT ON N-TYPE AND P-TYPE SILICON [J].

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IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (06) :4493-4500

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