PARAMAGNETIC-RESONANCE OF E'-TYPE CENTERS IN SI-IMPLANTED AMORPHOUS SIO2 - SI-29 HYPERFINE-STRUCTURE AND CHARACTERISTICS OF ZEEMAN RESONANCES

Electron paramagnetic resonance spectra were measured on SiO2 glasses implanted with Si ions to a fluence of 6 x 10(16) cm(-2) at an acceleration voltage of 160 kV. Three sets of doublets with different separation were observed in Si-29-implanted substrates and were ascribed to primary hyperfine structures due to a Si-29 nucleus (nuclear spin = 1/2). The doublets with separation of 44.0 and 9.0 mT were attributed to .Si-29=O-3 (E'-center, where the dot to D center in amorphous Si or P-b center in Si/SiO2 interfaces) radicals, respectively, and the doublet with a separation of similar to 23 mT is tentatively assigned to a .Si-29=SinO3-n (n = 1 or 2). The area intensity ratio of these three doublets was approximately 2.5 (44.0 mT): 2.5 (23.0 mT): 1.0 (9.0 mT). Zeeman resonances of E' centers have a broader spread in g(2) and are less saturable to microwave power than those of normal E' resonances. It is suggested that these are common characteristics of E' resonances in compacted amorphous SiO2.