HOT-CARRIER GENERATION IN SUBMICROMETER VLSI ENVIRONMENT

被引：22

作者：

SAKURAI, T

NOGAMI, K

KAKUMU, M

IIZUKA, T

机构：

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1986年 / 21卷 / 01期

关键词：

D O I：

10.1109/JSSC.1986.1052497

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：187 / 192

页数：6

共 11 条

[1]

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[2]

Hu C., 1983, International Electron Devices Meeting 1983. Technical Digest, P176

[3]

PFENNINGS L, 1984, FEB IEEE ISSCC, P16

[4] A LOW-POWER 46 NS 256 KBIT CMOS STATIC RAM WITH DYNAMIC DOUBLE WORD LINE [J].

SAKURAI, T ;

MATSUNAGA, J ;

ISOBE, M ;

OHTANI, T ;

SAWADA, K ;

AONO, A ;

NOZAWA, H ;

IIZUKA, T ;

KOHYAMA, S .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1984, 19 (05) :578-585

[5]

SAKURAI T, 1984, P INT C SOLID STATE, P74

[6]

SAKURAI T, 1985, FEB IEEE ISSCC, P272

[7]

Sing Y. W., 1980, International Electron Devices Meeting. Technical Digest, P732

[8]

SUZUKI Y, 1973, FEB IEEE ISSCC

[9] HOT-CARRIER EFFECTS IN SUBMICROMETER MOS VLSIS [J].

TAKEDA, E .

IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1984, 131 (05) :153-162

[10]

TAKEDA E, 1983, 1983 P S VLSI TECH, P104

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