HETEROJUNCTION IMPATT DIODES

被引：13

作者：

BAILEY, MJ

机构：

[1] Litton Solid State, Santa Clara, CA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1992年 / 39卷 / 08期

关键词：

D O I：

10.1109/16.144671

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Heterojunction IMPATT diodes, which incorporate an abrupt GaAs/Al0.3Ga0.7As p/N heterojunction in place of the standard p/n junction, have shown a number of significant properties that represent a considerable technological advance. Ku-band experimental devices exhibit up to 2.0 dB higher power, superior dc characteristics, and 3-6 dB less phase noise content. These and other properties are examined in detail, and a first-order theory of operation is proposed.

引用

页码：1829 / 1834

页数：6

共 7 条

[1] BASIC PRINCIPLES AND PROPERTIES OF AVALANCHE TRANSIT-TIME DEVICES [J].