VAN-DER-WAALS EPITAXY OF THIN INSE FILMS ON MOTE2

被引：23

作者：

SCHLAF, R ^{[1
]}

TIEFENBACHER, S ^{[1
]}

LANG, O ^{[1
]}

PETTENKOFER, C ^{[1
]}

JAEGERMANN, W ^{[1
]}

机构：

[1] HAHN MEITNER INST BERLIN GMBH,SOLARE ENERGET ABT,GLIENICKER STR 100,D-14109 BERLIN,GERMANY

来源：

SURFACE SCIENCE | 1994年 / 303卷 / 1-2期

关键词：

D O I：

10.1016/0039-6028(94)90610-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Thin epitaxial films of InSe were grown by MBE on the van der Waals (0001) surface of n-doped MoTe2 Crystals. The interface was characterized in situ by XPS, UPS and LEED and ex situ by X-ray diffraction (XRD) measurements. The LEED pattern shows clearly epitaxial growth of the InSe films. The X-ray diffraction pattern of 100 nm-films indicates that only stoichiometric InSe is present. The UPS valence band spectra show a close resemblance to those of cleaved CVT grown n-type single crystals. The XPS core level spectra of In and Se also correspond to single crystal spectra. From these results we draw the conclusion that MBE-grown InSe thin films on MoTe2 form non-reactive and abrupt epitaxial heterojunctions.

引用

页码：L343 / L347

页数：5

共 22 条

[1]

BRAHIMOTSMANE L, 1993, APPLIED SURFACE SCI, V65, P479

[2]

Bucher E., 1992, PHOTOELECTROCHEMISTR

[3] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION STUDIES OF INSE AND GASE LAYERED COMPOUNDS GROWN BY MOLECULAR-BEAM EPITAXY [J].

EMERY, JY ;

BRAHIMOSTMANE, L ;

HIRLIMANN, C ;

CHEVY, A .

JOURNAL OF APPLIED PHYSICS, 1992, 71 (07) :3256-3259

[4]

EMERY JY, 1992, MICROIONICS SOLID ST, P41

[5] STUDY OF THE HETEROINTERFACES INSE ON GASE AND GASE ON INSE [J].

FARGUES, D ;

BRAHIMOTSMANE, L ;

EDDRIEF, M ;

SEBENNE, C ;

BALKANSKI, M .

APPLIED SURFACE SCIENCE, 1993, 65-6 :661-666

[6] ELECTRICAL AND PHOTOVOLTAIC PROPERTIES OF INXSE1-X THIN-FILMS [J].

GUESDON, JP ;

KOBBI, B ;

JULIEN, C ;

BALKANSKI, M .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1987, 102 (01) :327-335

[7] CRYSTALLIZATION OF FLASH EVAPORATED THIN-FILMS OF INSE [J].

HASHIMOTO, H ;

NISHIMURA, H ;

SUZUKI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (06) :1163-1164

[8] APPLICATION OF ASYMMETRICAL GAUSSIAN LORENTZIAN MIXED-FUNCTION FOR X-RAY PHOTOELECTRON CURVE SYNTHESIS [J].

KOJIMA, I ;

KURAHASHI, M .

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1987, 42 (02) :177-181

[9] ULTRASHARP INTERFACES GROWN WITH VANDERWAALS EPITAXY [J].

KOMA, A ;

YOSHIMURA, K .

SURFACE SCIENCE, 1986, 174 (1-3) :556-560

[10] VANDERWAALS EPITAXY - A NEW EPITAXIAL-GROWTH METHOD FOR A HIGHLY LATTICE-MISMATCHED SYSTEM [J].

KOMA, A .

THIN SOLID FILMS, 1992, 216 (01) :72-76

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