STUDY OF THE HETEROINTERFACES INSE ON GASE AND GASE ON INSE

InSe and GaSe thin films are grown on freshly cleaved (00.1) substrates of GaSe and InSe, respectively, by molecular beam epitaxy. They are studied in situ by X-ray photoelectron spectroscopy (XPS) and reflection high energy electron diffraction (RHEED). From the attenuation curves of the XPS substrate core level peaks, the quasi layer-by-layer growth is shown during the first stages of deposition in agreement with RHEED results. But both interfaces are not totally symmetrical. For InSe on GaSe(00.1), the sharpness of the interface is shown and the conditions of growth are well established. For GaSe on InSe(00.1), the sharpness of the interface can also be suggested although it is less clear; this is related to the growth conditions.