NEW EPITAXIAL-GROWTH METHOD FOR MODULATED STRUCTURES USING VANDERWAALS INTERACTIONS

被引：61

作者：

KOMA, A

机构：

[1] Department of Chemistry, University of Tokyo, Bunkyo-ku, Tokyo

来源：

SURFACE SCIENCE | 1992年 / 267卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(92)91081-L

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The lattice matching problem usually encountered in the heteroepitaxial growth has been proved to be overcome, when the interface has a Van der Waals nature. This introduces a new way to prepare novel modulated structures using various kinds of layered materials. It has also been found that the ultrathin films thus prepared show in-plane modulated structures in scanning tunneling microscope images, which arise from the interference between two lattice-mismatched layers separated by the Van der Waals gap.

引用

页码：29 / 33

页数：5

共 17 条

[1]

Aoto N, 1983, 15 C SOL STAT DEV MA, P309

[2] ULTRASHARP INTERFACES GROWN WITH VANDERWAALS EPITAXY [J].