ANNEALING BEHAVIOR OF THIN POLYCRYSTALLINE SILICON FILMS DAMAGED BY SILICON ION-IMPLANTATION IN THE CRITICAL AMORPHIZATION RANGE

被引：10

作者：

KWIZERA, P

REIF, R

机构：

来源：

THIN SOLID FILMS | 1983年 / 100卷 / 03期

关键词：

D O I：

10.1016/0040-6090(83)90280-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：227 / 233

页数：7

共 12 条

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