LOW-TEMPERATURE PROCESS TO INCREASE THE GRAIN-SIZE IN POLYSILICON FILMS

被引：37

作者：

REIF, R

KNOTT, JE

机构：

来源：

关键词：

D O I：

10.1049/el:19810413

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：586 / 588

页数：3

共 6 条

[1]

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RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1976, 29 (02) :117-119

KAMINS, TI ;

MANDURAH, MM ;

SARASWAT, KC .

[4] REGROWTH OF AMORPHOUS FILMS [J].

LAU, SS .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (05) :1656-1661

[5]

MAYER JW, 1970, ION IMPLANTATION SEM, P45

[6] SUBSTRATE TEMPERATURE-MEASUREMENT DURING ION-IMPLANTATION [J].

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USUI, H ;

ASHIKAWA, M .