RANDOM AND CHANNELING STOPPING POWER OF NITROGEN IN SILICON IN THE 700-1500-KEV RANGE

被引：14

作者：

BENTINI, GG ^{[1
]}

BIANCONI, M ^{[1
]}

NIPOTI, R ^{[1
]}

MALAGUTI, F ^{[1
]}

VERONDINI, E ^{[1
]}

机构：

[1] UNIV BOLOGNA,DIPARTMENTO FIS,I-40126 BOLOGNA,ITALY

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1991年 / 53卷 / 01期

关键词：

D O I：

10.1016/0168-583X(91)95438-J

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Electronic stopping measurements of N14+ ions in silicon have been performed in the energy range between 0.7 MeV and 1.5 MeV. The experiments were made by transmission through thin (< 0.5-mu-m) Si single crystals both in random and <100>, <110> and <112> directions. In the energy range investigated the experimental data show a linear dependence of the stopping power on ion velocity. The effective charge, as evaluated by scaling the experimental stopping of tabulated hydrogen data, ranged from 2.5 to 3.5, in agreement with most theoretical evaluations.

引用

页码：1 / 6

页数：6