MODELING OF INTENSITY NOISE INCLUDING SQUEEZING IN DFB AND FABRY-PEROT SEMICONDUCTOR-LASER DIODES

A new time-domain model using the quantum formalism of the positive-P distribution is used to investigate squeezing in laser diodes, taking into account longitudinal hole burning and distributed noise sources, under steady-state and large-signal modulation. Simulations indicate that the laser structure determines the lowest achievable intensity noise. With losses present or power escaping from the rear facet, this minimum noise may be much higher than expected from the device quantum efficiency. Squeezing appears more difficult in DFB lasers than in Fabry-Perot lasers in our simulations. Mode-partition noise is removed by low-loss passive DBR sections, and such laser diodes are promising sources with low-intensity noise. Intensity noise in the large-signal dynamic regime is also simulated, showing that intensity-squeezed light output is possible.