THERMOELECTRIC DEVICES USING SEMICONDUCTOR QUANTUM-WELLS

被引：41

作者：

MAHAN, GD

LYON, HB

机构：

[1] UNIV TENNESSEE,DEPT PHYS & ASTRON,KNOXVILLE,TN 37996

[2] MARLOW IND,DALLAS,TX 75238

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 76卷 / 03期

关键词：

D O I：

10.1063/1.357715

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The efficiency of thermoelectric devices are analyzed for a superlattice of semiconductor quantum wells. It is assumed that the quantum wells are the thermoelectric active elements, and the layers between conduct only heat. It is shown that the efficiency of the device depends on the property of both layers.

引用

页码：1899 / 1901

页数：3

共 16 条

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