EPITAXIAL DEPOSITION OF PB-XSN-1-XTE ON PB-XSN-1-XTE SUBSTRATES IN A CLOSED SYSTEM

被引：11

作者：

PARKER, SG ^{[1
]}

机构：

[1] TEXAS INSTR INC,DALLAS,TX 75222

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1976年 / 123卷 / 06期

关键词：

D O I：

10.1149/1.2132968

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：920 / 924

页数：5

共 28 条

[21] FORMATION OF PB DURING EPITAXIAL-GROWTH OF PBS ON KCL IN A VITREOUS SILICA HOT WALL SYSTEM [J].

PAIC, M ;

PAIC, V .

JOURNAL OF MATERIALS SCIENCE, 1972, 7 (11) :1260-&

[22]

Parker S. G., 1968, Journal of Crystal Growth, V3-4Spe, P490, DOI 10.1016/0022-0248(68)90207-8

[23] GROWTH OF LARGE CRYSTALS OF (PB,GE)TE AND (PB,SN)TE [J].

PARKER, SG ;

PINNELL, JE ;

JOHNSON, RE .

JOURNAL OF ELECTRONIC MATERIALS, 1974, 3 (04) :731-746

[24] PREPARATION AND PROPERTIES OF LEAD-TIN TELLURIDE PHOTODIODES [J].

ROLLS, W ;

LEE, R ;

EDDINGTO.RJ .

SOLID-STATE ELECTRONICS, 1970, 13 (01) :75-+

[25] CRYSTAL SURFACE EFFECTS ON THE NUCLEATION AND EPITAZIAL GROWTH OF GOLD DEPOSITS FROM THE VAPOUR PHASE [J].

UEDA, R ;

INUZUKA, T .

JOURNAL OF CRYSTAL GROWTH, 1971, 9 (01) :79-&

[26] SINGLE HETEROJUNCTION PB1- SN TE DIODE LASERS [J].

WALPOLE, JN ;

CALAWA, AR ;

RALSTON, RW ;

HARMAN, TC ;

MCVITTIE, JP .

APPLIED PHYSICS LETTERS, 1973, 23 (11) :620-622

[27]

WEINSTEIN M, 1967, CRYST GROWTH, P537

[28]

YOGI K, 1971, J CRYST GROWTH, V9, P84

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