CHARGE BUILD UP AND BREAKDOWN IN THIN SIO2 GATE DIELECTRICS

被引：6

作者：

HILLEN, MW

DEKEERSMAECKER, RF

HEYNS, MM

HAYWOOD, SK

DARAKCHIEV, IS

机构：

来源：

IEEE TRANSACTIONS ON ELECTRICAL INSULATION | 1984年 / 19卷 / 03期

关键词：

D O I：

10.1109/TEI.1984.298756

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：245 / 249

页数：5

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[6] TRAP GENERATION AND ELECTRON DETRAPPING IN SIO2 DURING HIGH-FIELD STRESSING OF METAL-OXIDE-SEMICONDUCTOR STRUCTURES [J].

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[10] DIELECTRIC-BREAKDOWN PROPERTIES OF SIO2-FILMS GROWN IN HALOGEN AND HYDROGEN-CONTAINING ENVIRONMENTS [J].

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