2 COMPONENTS OF LIGHT-INDUCED PHOTOCONDUCTIVITY DECAYS IN A-SI-H

被引：2

作者：

KAKINUMA, H

NISHIKAWA, S

WATANABE, T

NIHEI, K

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1985年 / 24卷 / 08期

关键词：

D O I：

10.1143/JJAP.24.979

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：979 / 983

页数：5

共 22 条

[1] LIGHT-INDUCED DANGLING BONDS IN HYDROGENATED AMORPHOUS-SILICON [J].

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STUKE, J ;

BEICHLER, J .

APPLIED PHYSICS LETTERS, 1981, 38 (06) :456-458

[2]

DERSCH H, 1983, PHYS REV B, V28, P4679

[3] EFFECT OF ANNEALING AND LIGHT EXPOSURE ON THE FIELD-EFFECT DENSITY OF STATES IN GLOW-DISCHARGE A-SI-H [J].

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PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1982, 45 (04) :407-434

[4] THEORETICAL MODELING OF AMORPHOUS SILICON-BASED ALLOY P-I-N SOLAR-CELLS [J].

HACK, M ;

SHUR, M .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (10) :5858-5863

[5] OBSERVATION OF PHOTOINDUCED CHANGES IN THE BULK-DENSITY OF GAP STATES IN HYDROGENATED AMORPHOUS-SILICON [J].

LANG, DV ;

COHEN, JD ;

HARBISON, JP ;

SERGENT, AM .

APPLIED PHYSICS LETTERS, 1982, 40 (06) :474-476

[6] FATIGUE EFFECT IN LUMINESCENCE OF GLOW-DISCHARGE AMORPHOUS-SILICON AT LOW-TEMPERATURES [J].

MORIGAKI, K ;

HIRABAYASHI, I ;

NAKAYAMA, M ;

NITTA, S ;

SHIMAKAWA, K .

SOLID STATE COMMUNICATIONS, 1980, 33 (08) :851-856

[7] EXISTENCE OF IRREVERSIBILITY IN STAEBLER-WRONSKI EFFECT AND FATIGUE EFFECT OF PHOTO-LUMINESCENCE OF GDA-SI-H [J].

NITTA, S ;

TAKAHASHI, Y ;

NODA, M .

JOURNAL DE PHYSIQUE, 1981, 42 (NC4) :403-406

[8] STEADY-STATE PHOTOCONDUCTIVITY IN AMORPHOUS-SEMICONDUCTORS CONTAINING CORRELATED DEFECTS [J].

OKAMOTO, H ;

KIDA, H ;

HAMAKAWA, Y .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1984, 49 (03) :231-247

[9] LIGHT-INDUCED RADIATIVE RECOMBINATION CENTERS IN HYDROGENATED AMORPHOUS SILICON [J].

PANKOVE, JI ;

BERKEYHEISER, JE .

APPLIED PHYSICS LETTERS, 1980, 37 (08) :705-706

[10] ANNEALING AND LIGHT-INDUCED-CHANGES IN THE FIELD-EFFECT CONDUCTANCE OF AMORPHOUS-SILICON [J].

POWELL, MJ ;

EASTON, BC ;

NICHOLLS, DH .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (07) :5068-5078

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