EXISTENCE OF IRREVERSIBILITY IN STAEBLER-WRONSKI EFFECT AND FATIGUE EFFECT OF PHOTO-LUMINESCENCE OF GDA-SI-H

被引：5

作者：

NITTA, S

TAKAHASHI, Y

NODA, M

机构：

来源：

JOURNAL DE PHYSIQUE | 1981年 / 42卷 / NC4期

关键词：

D O I：

10.1051/jphyscol:1981487

中图分类号：

学科分类号：

摘要：

引用

页码：403 / 406

页数：4

共 6 条

[1] NEW EVIDENCE FOR DEFECT CREATION BY HIGH OPTICAL-EXCITATION IN GLOW-DISCHARGE AMORPHOUS-SILICON [J].

HIRABAYASHI, I ;

MORIGAKI, K ;

NITTA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (07) :L357-L360

[2] FATIGUE EFFECT IN LUMINESCENCE OF GLOW-DISCHARGE AMORPHOUS-SILICON AT LOW-TEMPERATURES [J].

MORIGAKI, K ;

HIRABAYASHI, I ;

NAKAYAMA, M ;

NITTA, S ;

SHIMAKAWA, K .

SOLID STATE COMMUNICATIONS, 1980, 33 (08) :851-856

[3] PROTON MAGNETIC-RESONANCE SPECTRA OF PLASMA-DEPOSITED AMORPHOUS SI-H FILMS [J].

REIMER, JA ;

VAUGHAN, RW ;

KNIGHTS, JC .

PHYSICAL REVIEW LETTERS, 1980, 44 (03) :193-196

[4] INFLUENCE OF INTERFACE CHARGES ON TRANSPORT MEASUREMENTS IN AMORPHOUS SILICON FILMS [J].

SOLOMON, I ;

DIETL, T ;

KAPLAN, D .

JOURNAL DE PHYSIQUE, 1978, 39 (11) :1241-1246

[5] OPTICALLY INDUCED CONDUCTIVITY CHANGES IN DISCHARGE-PRODUCED HYDROGENATED AMORPHOUS-SILICON [J].

STAEBLER, DL ;

WRONSKI, CR .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) :3262-3268

[6] REVERSIBLE CONDUCTIVITY CHANGES IN DISCHARGE-PRODUCED AMORPHOUS SI [J].

STAEBLER, DL ;

WRONSKI, CR .

APPLIED PHYSICS LETTERS, 1977, 31 (04) :292-294

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