NEW EVIDENCE FOR DEFECT CREATION BY HIGH OPTICAL-EXCITATION IN GLOW-DISCHARGE AMORPHOUS-SILICON

被引：130

作者：

HIRABAYASHI, I ^{[1
]}

MORIGAKI, K ^{[1
]}

NITTA, S ^{[1
]}

机构：

[1] GIFU UNIV,FAC ENGN,KAKAMIGAHARA,GIFU 504,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1980年 / 19卷 / 07期

关键词：

D O I：

10.1143/JJAP.19.L357

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：L357 / L360

页数：4

相关论文

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[8] LUMINESCENCE STUDIES OF PLASMA-DEPOSITED HYDROGENATED SILICON
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