EFFECT OF SUBSTRATE TEMPERATURES AND ANNEALING ON OPTICALLY DETECTED MAGNETIC-RESONANCE IN GLOW-DISCHARGE AMORPHOUS SILICON

被引：5

作者：

MORIGAKI, K

CAVENETT, BC

DAWSON, P

NITTA, S

SHIMAKAWA, K

机构：

[1] UNIV HULL,DEPT PHYS,HULL HU6 7RX,N HUMBERSIDE,ENGLAND

[2] GIFU UNIV,FAC ENGN,KAKAMIGAHARA,GIFU 504,JAPAN

来源：

SOLID STATE COMMUNICATIONS | 1979年 / 32卷 / 09期

关键词：

D O I：

10.1016/0038-1098(79)90757-9

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Optically detected magnetic resonance experiments have been performed at 2 K in glow-discharge amorphous silicon with different substrate temperatures. Effects of annealing and illumination on ODMR have been examined. A broad line is interpreted in terms of a three-centre bond model. © 1979.

引用

页码：795 / 799

页数：5

共 13 条

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[9] KOMATSUBARA KF, COMMUNICATION
[10] OPTICALLY DETECTED ELECTRON-SPIN RESONANCE IN AMORPHOUS SILICON
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DUNSTAN, DJ
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[J]. SOLID STATE COMMUNICATIONS, 1978, 26 (12) : 981 - 985

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