INSITU STUDY OF THE HYDROGEN RICH OVERLAYER AT THE A-SI-H SURFACE BY INFRARED ELLIPSOMETRY

被引：28

作者：

BLAYO, N

DREVILLON, B

机构：

[1] Laboratoire de Physique des Interfaces et des Couches Minces (UPR 258 du CNRS), Ecole Polytechnique

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1991年 / 137卷

关键词：

D O I：

10.1016/S0022-3093(05)80234-0

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The early stage of the growth of plasma deposited amorphous silicon (a-Si:H) on glass substrate is investigated by in situ infrared phase modulated ellipsometry (IRPME) in the silicon-hydrogen stretching mode region. Analysis of the spectra provides a precise description of the film evolution. a-Si:H films grow beneath an hydrogen rich overlayer containing SiH2 groups. The hydrogen-passivated surface of a-Si:H is then weakly reactive. This hydrogen rich overlayer can be removed by the exposure of a freshly deposited a-Si:H films to Argon and hydrogen plasmas.

引用

页码：771 / 774

页数：4

共 9 条

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