ELECTROLUMINESCENCE OF ZINC-SULFIDE THIN-FILMS ACTIVATED WITH DONORS AND ACCEPTORS

被引：12

作者：

SHIIKI, M

KANEHISA, O

机构：

[1] Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo, 185

来源：

JOURNAL OF CRYSTAL GROWTH | 1992年 / 117卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(92)90908-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Thin films of zinc sulfide (ZnS) doped with donors and acceptors are prepared by metalorganic chemical vapor deposition (MOCVD) under reduced pressure. The photoluminescence spectrum of a ZnS:Ag,Cl film shows a peak at 460 nm. This emission is attributed to the donor-acceptor (D-A) pair emission from the time-resolved spectra. A ZnS:Ag,Cl thin film is used in an AC-coupled EL device having a MIS structure, ITO-ZnS:Ag,Cl(600 nm thick)-Ta2O5-Al. This device has a blue broad band emission with a peak at 467 nm. Luminance of 30 cd/m2 is obtained under 5 kHz sinusoidal voltage excitation.

引用

页码：1035 / 1039

页数：5