POLYIODIDE-TREATED N-WSE2/AU SCHOTTKY JUNCTIONS

[1] PHOTO-VOLTAIC PROPERTIES OF SOME SEMICONDUCTING LAYER STRUCTURES [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 49 (02): : 437 - 443

[2] Heller A., 1978, Thirteenth IEEE Photovoltaic Specialists Conference1978, P1253

[3] EFFECT OF PHOTO-ELECTROCHEMICAL ETCHING ON CHARGE COLLECTION EFFICIENCY IN CDS-AN ELECTRON-BEAM INDUCED CURRENT STUDY [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (08) : 4676 - 4678

[4] EFFECT OF RUTHENIUM IONS ON GRAIN-BOUNDARIES IN GALLIUM-ARSENIDE THIN-FILM PHOTO-VOLTAIC DEVICES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (01) : 90 - 95

[5] THE PHOTOELECTROCHEMISTRY OF THE AQUEOUS IODIDE IODINE REDOX SYSTEM AT N-TYPE MOSE2-ELECTRODES [J]. ELECTROCHIMICA ACTA, 1981, 26 (12) : 1771 - 1778

[6] A KINETIC INTERPRETATION OF THE PHOTOCURRENTS OBTAINED WITH [FE(CN)6]4-, FE(II), AND I- AT N-TYPE MOSE2-ELECTRODES AND WSE2-ELECTRODES [J]. ELECTROCHIMICA ACTA, 1981, 26 (12) : 1709 - 1713

[7] RELATIONSHIP BETWEEN SURFACE-MORPHOLOGY AND SOLAR CONVERSION EFFICIENCY OF WSE2 PHOTOANODES [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1980, 102 (06) : 1877 - 1880

[8] SCHOTTKY-BARRIER FORMATION ON A COVALENT SEMICONDUCTOR WITHOUT FERMI-LEVEL PINNING - THE METAL-MOS2(0001) INTERFACE [J]. PHYSICAL REVIEW B, 1987, 36 (03): : 1647 - 1656

[9] LUXSTEINER MC, 1984, 1ST PHOT SOL EN C KO, P259

[10] SEMICONDUCTOR ELECTRODES .34. PHOTOELECTROCHEMISTRY OF P-TYPE WSE2 IN ACETONITRILE AND THE P-WSE2-NITROBENZENE CELL [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (05) : 1055 - 1060

[1] PHOTO-VOLTAIC PROPERTIES OF SOME SEMICONDUCTING LAYER STRUCTURES [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 49 (02): : 437 - 443

[2] Heller A., 1978, Thirteenth IEEE Photovoltaic Specialists Conference1978, P1253

[3] EFFECT OF PHOTO-ELECTROCHEMICAL ETCHING ON CHARGE COLLECTION EFFICIENCY IN CDS-AN ELECTRON-BEAM INDUCED CURRENT STUDY [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (08) : 4676 - 4678

[4] EFFECT OF RUTHENIUM IONS ON GRAIN-BOUNDARIES IN GALLIUM-ARSENIDE THIN-FILM PHOTO-VOLTAIC DEVICES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (01) : 90 - 95

[5] THE PHOTOELECTROCHEMISTRY OF THE AQUEOUS IODIDE IODINE REDOX SYSTEM AT N-TYPE MOSE2-ELECTRODES [J]. ELECTROCHIMICA ACTA, 1981, 26 (12) : 1771 - 1778

[6] A KINETIC INTERPRETATION OF THE PHOTOCURRENTS OBTAINED WITH [FE(CN)6]4-, FE(II), AND I- AT N-TYPE MOSE2-ELECTRODES AND WSE2-ELECTRODES [J]. ELECTROCHIMICA ACTA, 1981, 26 (12) : 1709 - 1713

[7] RELATIONSHIP BETWEEN SURFACE-MORPHOLOGY AND SOLAR CONVERSION EFFICIENCY OF WSE2 PHOTOANODES [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1980, 102 (06) : 1877 - 1880

[8] SCHOTTKY-BARRIER FORMATION ON A COVALENT SEMICONDUCTOR WITHOUT FERMI-LEVEL PINNING - THE METAL-MOS2(0001) INTERFACE [J]. PHYSICAL REVIEW B, 1987, 36 (03): : 1647 - 1656

[9] LUXSTEINER MC, 1984, 1ST PHOT SOL EN C KO, P259

[10] SEMICONDUCTOR ELECTRODES .34. PHOTOELECTROCHEMISTRY OF P-TYPE WSE2 IN ACETONITRILE AND THE P-WSE2-NITROBENZENE CELL [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (05) : 1055 - 1060