IMPROVEMENT OF THE CARRIER CONFINEMENT BY DOUBLE-BARRIER GAAS/ALAS/(AL,GA)AS QUANTUM-WELL STRUCTURES

被引：20

作者：

NEU, G ^{[1
]}

CHEN, Y ^{[1
]}

DEPARIS, C ^{[1
]}

MASSIES, J ^{[1
]}

机构：

[1] SCUOLA NORMALE SUPER PISA,I-56125 PISA,ITALY

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 19期

关键词：

D O I：

10.1063/1.104976

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The insertion of few AlAs monolayers at the interfaces between a GaAs quantum well and (Al,Ga)As barriers gives rise to a new type of structure which is well described as a double-barrier quantum well. It is shown that only one or two AlAs monolayers are sufficient to significantly increase the confinement energies. Our results are discussed in the light of low-temperature photoluminescence experiments and are well described in the framework of numerical calculations based on the envelope function formalism.

引用

页码：2111 / 2113

页数：3

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