STUDY OF C49-TISI2 AND C54-TISI2 FORMATION ON DOPED POLYCRYSTALLINE SILICON USING IN-SITU RESISTANCE MEASUREMENTS DURING ANNEALING

被引：38

作者：

CLEVENGER, LA ^{[1
]}

MANN, RW ^{[1
]}

ROY, RA ^{[1
]}

SAENGER, KL ^{[1
]}

CABRAL, C ^{[1
]}

PICCIRILLO, J ^{[1
]}

机构：

[1] IBM MICROELECTR,ESSEX JCT,VT 05452

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 76卷 / 12期

关键词：

D O I：

10.1063/1.357897

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In situ resistance versus temperature or time for reactions between 32 and 57.5 nm of titanium and undoped or doped polycrystalline silicon (boron, arsenic, or phosphorus, 7.9×1019-3.0×10 20/cm3) has been measured and no clear correlation was found between the activation energy for the formation of the industrially important low-resistance C54-TiSi2 phase and its formation temperature. It is also demonstrated that with certain moderate doping levels typical of complementary metal-oxide-semiconductor manufacturing, boron or phosphorus-doped polycrystalline silicon can delay the formation of C54-TiSi2 more than arsenic-doped polycrystalline silicon. Finally, by using in situ resistance measurements, it is demonstrated that the "two-step" thermal annealing process similar to a salicide process requires less thermal annealing time at high temperatures to form C54-TiSi 2 than a single "one-step" thermal anneal at the same temperature. © 1994 American Institute of Physics.

引用

页码：7874 / 7881

页数：8

共 35 条

[1] IMPROVED CONTROL OF MOMENTARY RAPID THERMAL ANNEALING FOR SILICIDATION [J].