TITANIUM DISILICIDE FORMATION ON HEAVILY DOPED SILICON SUBSTRATES

被引：107

作者：

BEYERS, R ^{[1
]}

COULMAN, D ^{[1
]}

MERCHANT, P ^{[1
]}

机构：

[1] HEWLETT PACKARD CO,PALO ALTO,CA 94304

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 11期

关键词：

D O I：

10.1063/1.338337

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：5110 / 5117

页数：8

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