CHEMICAL AND STRUCTURAL ASPECTS OF REACTION AT THE TI SI INTERFACE

被引：98

作者：

BUTZ, R ^{[1
]}

RUBLOFF, GW ^{[1
]}

TAN, TY ^{[1
]}

HO, PS ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

PHYSICAL REVIEW B | 1984年 / 30卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.30.5421

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5421 / 5429

页数：9

共 28 条

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[8] SILICON-REFRACTORY METAL INTERFACES - EVIDENCE OF ROOM-TEMPERATURE INTERMIXING FOR SI-CR
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 657 - 660
[9] SI-CR AND SI-PD INTERFACE REACTION AND BULK ELECTRONIC-STRUCTURE OF TI-SILICIDE, V-SILICIDE, CR-SILICIDE, CO-SILICIDE, NI-SILICIDE, AND PD-SILICIDE
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[J]. SURFACE SCIENCE, 1983, 132 (1-3) : 324 - 335
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