PHOTO-LUMINESCENCE OF CHROMIUM DOPED AND CHROMIUM DIFFUSED GAAS

被引：27

作者：

SKOLNICK, MS ^{[1
]}

BROZEL, MR ^{[1
]}

TUCK, B ^{[1
]}

机构：

[1] UNIV NOTTINGHAM,DEPT ELECTR & ELECT ENGN,NOTTINGHAM NG7 2RD,ENGLAND

来源：

关键词：

D O I：

10.1016/0038-1098(82)90499-9

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：379 / 384

页数：6

共 26 条

[1] CARBON, OXYGEN AND SILICON IMPURITIES IN GALLIUM-ARSENIDE
BROZEL, MR
CLEGG, JB
NEWMAN, RC
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1978, 11 (09) : 1331 - 1339
[2] BROZEL MR, 1982, UNPUB J CRYSTAL GROW
[3] BROZEL MR, 1982, UNPUB SOLID STATE CO
[4] BROZEL MR, 1981, ELECTRON LETT, V17, P533
[5] CR2+(3D4) ABSORPTION IN GAAS
CLERJAUD, B
HENNEL, AM
MARTINEZ, G
[J]. SOLID STATE COMMUNICATIONS, 1980, 33 (09) : 983 - 985
[6] ELECTRON-CAPTURE (INTERNAL) LUMINESCENCE FROM OXYGEN DONOR IN GALLIUM PHOSPHIDE
DEAN, PJ
HENRY, CH
[J]. PHYSICAL REVIEW, 1968, 176 (03): : 928 - &
[7] EAVES L, 1981, J PHYS C SOLID STATE, V14, pL693, DOI 10.1088/0022-3719/14/23/004
[8] EAVES L, 1980, P OJI INT SEMINAR HA, P130
[9] EAVES L, 1980, P SEMIINSULATING 3 5, P145
[10] HIGH-PURITY SEMI-INSULATING GAAS MATERIAL FOR MONOLITHIC MICROWAVE INTEGRATED-CIRCUITS
HOBGOOD, HM
ELDRIDGE, GW
BARRETT, DL
THOMAS, RN
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (02) : 140 - 149