MAGNETORESISTANCE AND ELECTRONIC-STRUCTURE OF SI ON SAPPHIRE

被引：7

作者：

OHMURA, Y ^{[1
]}

机构：

[1] TOKYO SHIBAURA ELECT CO LTD,TOSHIBA RES & DEV CTR,KAWASAKI,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1976年 / 15卷

关键词：

D O I：

10.7567/JJAPS.15S1.233

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：233 / 238

页数：6

共 10 条

[1] THEORY OF THE GALVANOMAGNETIC EFFECTS IN GERMANIUM [J].

ABELES, B ;

MEIBOOM, S .

PHYSICAL REVIEW, 1954, 95 (01) :31-37

[2] CYCLOTRON RESONANCE EXPERIMENTS IN SILICON AND GERMANIUM [J].

DEXTER, RN ;

ZEIGER, HJ ;

LAX, B .

PHYSICAL REVIEW, 1956, 104 (03) :637-644

[3] TRANSPORT PROPERTIES OF A MANY-VALLEY SEMICONDUCTOR [J].

HERRING, C .

BELL SYSTEM TECHNICAL JOURNAL, 1955, 34 (02) :237-290

[4] TRANSPORT AND DEFORMATION-POTENTIAL THEORY FOR MANY-VALLEY SEMICONDUCTORS WITH ANISOTROPIC SCATTERING [J].

HERRING, C ;

VOGT, E .

PHYSICAL REVIEW, 1956, 101 (03) :944-961

[5]

HYNECEK J, 1974, J APPL PHYS, V45, P2631, DOI 10.1063/1.1663642

[6] ACCUMULATION AND INVERSION-LAYER HALL MOBILITIES IN SILICON FILMS ON SAPPHIRE [J].

IPRI, AC .

APPLIED PHYSICS LETTERS, 1973, 22 (01) :16-18

[7] GALVANOMAGNETIC EFFECTS IN N-TYPE SILICON [J].

KRAG, WE .

PHYSICAL REVIEW, 1960, 118 (02) :435-450

[8] MECHANICAL AND ELECTRICAL PROPERTIES OF EPITAXIAL SILICON FILMS ON SPINEL [J].

SCHLOTTERER, H .

SOLID-STATE ELECTRONICS, 1968, 11 (10) :947-+

[9] CYCLOTRON RESONANCE OF ELECTRONS IN SILICON AT TEMPERATURES UP TO 200 DEGREES K [J].

STRADLIN.RA ;

ZHUKOV, VV .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1966, 87 (555P) :263-&

[10]

YIN WM, 1974, J APPL PHYS, V45, P1456

← 1 →