MONOLITHIC GAAS MULTIVIBRATOR FOR OPERATION AT TEMPERATURES UP TO 300-DEGREES-C

被引：6

作者：

SCHWEEGER, G ^{[1
]}

SINGH, JK ^{[1
]}

FRICKE, K ^{[1
]}

KLINGELHOFER, C ^{[1
]}

HARTNAGEL, HL ^{[1
]}

机构：

[1] CENT ELECT ENGN RES INST,PILANI,RAJASTHAN,INDIA

来源：

ELECTRONICS LETTERS | 1989年 / 25卷 / 20期

关键词：

D O I：

10.1049/el:19890927

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1385 / 1386

页数：2

相关论文

共 5 条

[1] BEASOM ID, 1982, IEEE T IND ELECTRON, V29, P112
[2] FABRICATION AND HIGH-TEMPERATURE CHARACTERISTICS OF ION-IMPLANTED GAAS BIPOLAR-TRANSISTORS AND RING-OSCILLATORS
DOERBECK, FH
DUNCAN, WM
MCLEVIGE, WV
YUAN, HT
[J]. IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, 1982, 29 (02) : 136 - 139
[3] A GAAS INTEGRATED HALL SENSOR AMPLIFIER
LEPKOWSKI, TR
SHADE, G
KWOK, SP
FENG, M
DICKENS, LE
LAUDE, DL
SCHOENDUBE, B
[J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (04) : 222 - 224
[4] PETTENPAUL E, 1985, NOV P GAAS IC S MONT, P169
[5] ELECTRON-BEAM ANNEALED GE-WSI-AU AND GE-NI-WSI-AU HIGH-TEMPERATURE STABLE OHMIC CONTACTS ON N-GAAS
WURFL, J
NASSIBIAN, AG
HARTNAGEL, HL
LANGFELD, R
MAURER, C
[J]. INTERNATIONAL JOURNAL OF ELECTRONICS, 1989, 66 (02) : 213 - 225