LOWER TEMPERATURE POSTANNEALING OF THIN-FILMS OF YBA2CU3O7 AT LOWER OXYGEN PARTIAL-PRESSURE

被引：41

作者：

MOGROCAMPERO, A

TURNER, LG

机构：

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 04期

关键词：

D O I：

10.1063/1.104654

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thin films of YBa2Cu3O7 formed by ambient temperature deposition and furnace post-annealing have been obtained at annealing temperatures around 750-degrees-C and an oxygen partial pressure of 29 Pa. The zero resistance transition temperature of these smooth films on LaAlO3 was 89 K, and a critical current density in excess of 1 MA cm-2 at 77 K was found by transport measurements.

引用

页码：417 / 418

页数：2

共 5 条

[1] CORRELATION BETWEEN THE INSITU GROWTH-CONDITIONS OF YBCO THIN-FILMS AND THE THERMODYNAMIC STABILITY-CRITERIA
HAMMOND, RH
BORMANN, R
[J]. PHYSICA C, 1989, 162 : 703 - 704
[2] PHYSICAL VAPOR-DEPOSITION TECHNIQUES FOR THE GROWTH OF YBA2CU3O7 THIN-FILMS
HUMPHREYS, RG
SATCHELL, JS
CHEW, NG
EDWARDS, JA
GOODYEAR, SW
BLENKINSOP, SE
DOSSER, OD
CULLIS, AG
[J]. SUPERCONDUCTOR SCIENCE & TECHNOLOGY, 1990, 3 (01) : 38 - 52
[3] THICKNESS AND ANNEALING DEPENDENCE OF THE SUPERCONDUCTING TRANSITION-TEMPERATURE OF YBA2CU3O7-X THIN-FILMS ON OXIDIZED SILICON AND POLYCRYSTALLINE ALUMINA SUBSTRATES
MOGROCAMPERO, A
TURNER, LG
KENDALL, G
[J]. APPLIED PHYSICS LETTERS, 1988, 53 (25) : 2566 - 2568
[4] FILM THICKNESS DEPENDENCE OF CRITICAL CURRENT-DENSITY AND MICROSTRUCTURE FOR EPITAXIAL YBA2CU3O7-X FILMS
MOGROCAMPERO, A
TURNER, LG
HALL, EL
LEWIS, N
PELUSO, LA
BALZ, WE
[J]. SUPERCONDUCTOR SCIENCE & TECHNOLOGY, 1990, 3 (02) : 62 - 66
[5] EPITAXIAL-GROWTH AND CRITICAL CURRENT-DENSITY OF THIN-FILMS OF YBA2CU3O7-X ON LAALO3 SUBSTRATES
MOGROCAMPERO, A
TURNER, LG
HALL, EL
GARBAUSKAS, MF
LEWIS, N
[J]. APPLIED PHYSICS LETTERS, 1989, 54 (26) : 2719 - 2721

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