HYDROGENATION AND ANNEALING KINETICS OF GROUP-III ACCEPTORS IN OXIDIZED SILICON

被引：56

作者：

SAH, CT

PAN, SCS

HSU, CCH

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 57卷 / 12期

关键词：

D O I：

10.1063/1.335249

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5148 / 5161

页数：14

共 26 条

[1]

Abramowitz M., 1968, HDB MATH FUNCTIONS

[2]

CARSLAW HS, 1959, CONDUCTION HEAT SOLI, P63

[3] HOT-ELECTRON EMISSION IN N-CHANNEL IGFETS [J].

COTTRELL, PE ;

TROUTMAN, RR ;

NING, TH .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) :520-533

[4] HYDROGEN MIGRATION UNDER AVALANCHE INJECTION OF ELECTRONS IN SI METAL-OXIDE-SEMICONDUCTOR CAPACITORS [J].

GALE, R ;

FEIGL, FJ ;

MAGEE, CW ;

YOUNG, DR .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (12) :6938-6942

[5] HP GE - PURIFICATION, CRYSTAL-GROWTH, AND ANNEALING PROPERTIES [J].

HALL, RN .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (01) :320-325

[6]

HALL RN, 1984, COMMUNICATION MAY

[7]

HALL RN, 1984, COMMUNICATION SEP

[8] 1 MU-M MOSFET VLSI TECHNOLOGY .4. HOT-ELECTRON DESIGN CONSTRAINTS [J].

NING, TH ;

COOK, PW ;

DENNARD, RH ;

OSBURN, CM ;

SCHUSTER, SE ;

YU, HN .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) :346-353

[9]

NISHI Y, 1981, SILICON INTEGRATED A

[10] NEUTRALIZATION OF SHALLOW ACCEPTOR LEVELS IN SILICON BY ATOMIC-HYDROGEN [J].

PANKOVE, JI ;

CARLSON, DE ;

BERKEYHEISER, JE ;

WANCE, RO .

PHYSICAL REVIEW LETTERS, 1983, 51 (24) :2224-2225

← 1 2 3 →