MORPHOLOGICAL TRANSFORMATIONS OF THIN HETEROEPITAXIAL FILMS

被引：23

作者：

PINTUS, SM ^{[1
]}

STENIN, SI ^{[1
]}

TOROPOV, AI ^{[1
]}

TRUKHANOV, EM ^{[1
]}

KARASYOV, VY ^{[1
]}

机构：

[1] NOVOSIBIRSK STATE UNIV,NOVOSIBIRSK 630090,USSR

来源：

THIN SOLID FILMS | 1987年 / 151卷 / 02期

关键词：

MOLECULAR BEAM EPITAXY - SEMICONDUCTING GERMANIUM;

D O I：

10.1016/0040-6090(87)90241-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The features of two- and three-dimensional growth of thin heteroepitaxial films are analyzed with allowance for the energy of misfit dislocation (MD) networks. Criteria for distinguishing between Frank-van der Merwe, Stranski-Krastanov and Volmer-Weber growth modes are suggested. For the Stanski-Krastanov mode the transition from layer to island growth is considered to be associated with an increase in the interface energy owing to MD formation. The critical thickness of the pseudomorphic film in the case of the formation of dislocated islands is much less than that in the case of the introduction of MDs into the continuous film and depends on an average migration length of the adatoms. Some theoretical results are compared with experimental results for germanium films obtained by molecular beam epitaxy on Si(001) and Si(111) substrates.

引用

页码：275 / 288

页数：14

共 11 条

[1] TRANSMISSION ELECTRON-MICROSCOPY OBSERVATIONS OF MISFIT DISLOCATIONS IN GAASP EPITAXIAL-FILMS [J].