MASS AND ENERGY-DEPENDENCE OF THE SPUTTERING YIELD OF GALLIUM-ARSENIDE

被引：14

作者：

BHATTACHARYYA, SR

GHOSE, D

BASU, D

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1990年 / 47卷 / 03期

关键词：

D O I：

10.1016/0168-583X(90)90754-I

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The sputtering yields of GaAs(100) bombarded at normal incidence by mass analyzed 40Ar+, 84Kr+ and 132Xe+ ions obtained from an electromagnetic isotope separator are determined in the energy range 15-35 keV. The experimental values of the sputtering yield obtained by the method of weighing the collected sputtered material are compared with the total sputtering yield calculated theoretically. The surface topography of a Xe+ bombarded sample is examined under SEM as an associated part of the multicomponent physical sputtering. © 1990.

引用

页码：253 / 256

页数：4

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