EFFECT OF HIGH INTRINSIC ION CONCENTRATIONS ON ELECTRON ENERGIES IN SOLID-SOLUTIONS OF III-V AND II-VI SEMICONDUCTORS

被引：10

作者：

GLICKSMAN, M

KRAEFT, WD

机构：

[1] MIT, CAMBRIDGE, MA 02139 USA

[2] ERNST MORITZ ARNDT UNIV, DDR-2200 GREIFSWALD, GERMANY

来源：

关键词：

D O I：

10.1016/0038-1101(85)90225-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：151 / 161

页数：11

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