TRANSIENT REGIMES OF HOT CARRIERS IN P-TYPE SILICON

被引：11

作者：

REGGIANI, L

VAISSIERE, JC

NOUGIER, JP

GASQUET, D

机构：

[1] UNIV MONTPELLIER 2,CTR ETUD ELECTR SOLIDES,CNRS,LAB 21,F-34060 MONTPELLIER,FRANCE

[2] UNIV MONTPELLIER 2,GRECO MICROONDES,F-34060 MONTPELLIER,FRANCE

来源：

JOURNAL DE PHYSIQUE | 1981年 / 42卷 / NC7期

关键词：

D O I：

10.1051/jphyscol:1981744

中图分类号：

学科分类号：

摘要：

引用

页码：357 / 367

页数：11

共 19 条

[1] CURRENT TRANSPORT IN NARROW-BASE TRANSISTORS [J].

BACCARANI, G ;

JACOBONI, C ;

MAZZONE, AM .

SOLID-STATE ELECTRONICS, 1977, 20 (01) :5-10

[2] PATH VARIABLE FORMULATION OF HOT CARRIER PROBLEM [J].

BUDD, H .

PHYSICAL REVIEW, 1967, 158 (03) :798-&

[3]

BUDD HF, 1966, J PHYS SOC JPN, VS 21, P420

[4]

BUDD HF, 1966, P INT C PHYS SEMICON

[5]

CARNEZ B, 1980, J APPL PHYS, V51, P786

[6] MONTE-CARLO DETERMINATION OF ELECTRON TRANSPORT PROPERTIES IN GALLIUM ARSENIDE [J].

FAWCETT, W ;

BOARDMAN, AD ;

SWAIN, S .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1970, 31 (09) :1963-&

[7] SELF-SCATTERING IN MONTE-CARLO CALCULATIONS OF TRANSIENT DYNAMIC-RESPONSE IN SEMICONDUCTORS [J].

FERRY, DK .

PHYSICS LETTERS A, 1980, 78 (04) :375-378

[8] ON THE USE OF MONTE-CARLO TECHNIQUES FOR THE CALCULATION OF TRANSIENT DYNAMIC-RESPONSE IN SEMICONDUCTORS [J].

FERRY, DK ;

BARKER, JR .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1980, 100 (02) :683-689

[9]

KUROSAWA T, 1966, J PHYS SOC JPN, VS 21, P424

[10] MONTE-CARLO SIMULATION OF RESPONSE OF A SEMICONDUCTOR TO PERIODIC PERTURBATIONS [J].

LEBWOHL, PA .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (04) :1744-1752

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