HIGH-POWER SLM OPERATION OF 1.3-MU-M INP/INGAASP DFB LD WITH DOUBLY BURIED HETEROSTRUCTURE ON P-TYPE INP SUBSTRATE

被引：7

作者：

SUZUKI, Y

NAGAI, H

NOGUCHI, Y

MATSUOKA, T

KURUMADA, K

机构：

来源：

ELECTRONICS LETTERS | 1984年 / 20卷 / 21期

关键词：

D O I：

10.1049/el:19840598

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：881 / 882

页数：2

共 6 条

[1] A NOVEL TECHNIQUE FOR GALNASP/INP BURIED HETEROSTRUCTURE LASER FABRICATION [J].

LIAU, ZL ;

WALPOLE, JN .

APPLIED PHYSICS LETTERS, 1982, 40 (07) :568-570

[2] PREVENTION OF SURFACE CORRUGATION THERMAL DEFORMATION FOR INGAASP/INP DFB LASERS [J].

NAGAI, H ;

NOGUCHI, Y ;

MATSUOKA, T ;

SUZUKI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (05) :L291-L293

[3] INP/INGAASP P-TYPE SUBSTRATE AND MASS TRANSPORTED DOUBLY BURIED HETEROSTRUCTURE LASER [J].

NOGUCHI, Y ;

SUZUKI, Y ;

MATSUOKA, T ;

NAGAI, H .

ELECTRONICS LETTERS, 1984, 20 (19) :769-771

[4] HIGH-QUALITY 1.3 MU-M GAINASP-INP BH-DFB LASERS WITH 1ST-ORDER GRATINGS [J].

OKUDA, H ;

HIRAYAMA, Y ;

KINOSHITA, J ;

FURUYAMA, H ;

UEMATSU, Y .

ELECTRONICS LETTERS, 1983, 19 (22) :941-943

[5]

WAKITA K, UNPUB JPN J APPL PHY

[6] HIGHLY EFFICIENT SINGLE-LONGITUDINAL-MODE OPERATION OF ANTIREFLECTION-COATED 1.3 MU-M DFB-DC-PBH LD [J].

YAMAGUCHI, M ;

KITAMURA, M ;

MITO, I ;

MURATA, S ;

KOBAYASHI, K .

ELECTRONICS LETTERS, 1984, 20 (06) :233-235

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