QUANTUM INTERFERENCE DEVICES AND FIELD-EFFECT TRANSISTORS - A SWITCH ENERGY COMPARISON

被引:28
作者
PALM, T [1 ]
THYLEN, L [1 ]
NILSSON, O [1 ]
SVENSSON, C [1 ]
机构
[1] LINKOPING INST TECHNOL, DEPT PHYS & MEASUREMENT TECHNOL, S-58183 LINKOPING, SWEDEN
关键词
D O I
10.1063/1.355231
中图分类号
O59 [应用物理学];
学科分类号
摘要
We compare quantum interference devices, exemplified by a resonant tunnel transistor, an Aharonov-Bohm interferometer, and a Y-branch switch, to field-effect transistors regarding their capability to reach fundamentally limited switch energies as well as their normalized transconductance. The resonant tunnel transistor is found to behave similarly to the field-effect transistor (FET). The Aharonov-Bohm interferometer is essentially equivalent to a single-mode Y-branch switch, while the Y branch has an advantage in allowing multimode operation. The normalized transconductance of these two devices can be an order of magnitude larger than for a FET.
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页码:687 / 694
页数:8
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