A PHOTOEMISSION-STUDY OF THE SI(111)/GD INTERFACE - A COMPARISON WITH THE BULK SILICIDES

被引：17

作者：

PUPPIN, E

NOGAMI, J

CARBONE, C

SHEN, ZX

LINDAU, I

PATE, BB

ABBATI, I

BRAICOVICH, L

机构：

[1] CALTECH, JET PROP LAB, PASADENA, CA 91109 USA

[2] POLITECN MILAN, IST FIS, I-20133 MILAN, ITALY

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 04期

关键词：

D O I：

10.1116/1.583733

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1083 / 1086

页数：4

共 9 条

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