THE SILICON GADOLINIUM INTERFACE AT ROOM-TEMPERATURE

被引：24

作者：

CARBONE, C ^{[1
]}

NOGAMI, J ^{[1
]}

LINDAU, I ^{[1
]}

机构：

[1] STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1985年 / 3卷 / 03期

关键词：

D O I：

10.1116/1.573364

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：972 / 973

页数：2

共 7 条

[1]

CHENG IC, 1984, MATER RES SOC S P, V25, P39

[2] SAMARIUM VALENCE CHANGES AND REACTIVE INTERDIFFUSION AT THE SI(LLL)-SM INTERFACE [J].

FRANCIOSI, A ;

WEAVER, JH ;

PERFETTI, P ;

KATNANI, AD ;

MARGARITONDO, G .

SOLID STATE COMMUNICATIONS, 1983, 47 (06) :427-430

[3] SURFACE-MORPHOLOGY OF ERBIUM SILICIDE [J].

LAU, SS ;

PAI, CS ;

WU, CS ;

KUECH, TF ;

LIU, BX .

APPLIED PHYSICS LETTERS, 1982, 41 (01) :77-80

[4] 1ST SPECTROSCOPIC INVESTIGATION OF THE YB/SI INTERFACE AT ROOM-TEMPERATURE [J].

ROSSI, G ;

NOGAMI, J ;

LINDAU, I ;

BRAICOVICH, L ;

ABBATI, I ;

DELPENNINO, U ;

NANNARONE, S .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02) :781-784

[5] CONTACT REACTION BETWEEN SI AND RARE-EARTH-METALS [J].

THOMPSON, RD ;

TSAUR, BY ;

TU, KN .

APPLIED PHYSICS LETTERS, 1981, 38 (07) :535-537

[6]

THOMPSON RD, 1982, THIN SOLID FILMS, V53, P265

[7] LOW SCHOTTKY-BARRIER OF RARE-EARTH SILICIDE ON N-SI [J].

TU, KN ;

THOMPSON, RD ;

TSAUR, BY .

APPLIED PHYSICS LETTERS, 1981, 38 (08) :626-628

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