LOW SCHOTTKY-BARRIER OF RARE-EARTH SILICIDE ON N-SI

[1] ROLE OF METAL-SEMICONDUCTOR INTERFACE IN SILICON INTEGRATED-CIRCUIT TECHNOLOGY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (06): : 972 - 984

[2] THE FORMATION OF SILICIDES FROM THIN-FILMS OF SOME RARE-EARTH-METALS [J]. APPLIED PHYSICS LETTERS, 1980, 36 (07) : 594 - 596

[3] MOFFATT WG, 1978, BINARY PHASE DIAGRAM

[4] SCHOTTKY-BARRIER HEIGHT OF IRIDIUM SILICIDE [J]. APPLIED PHYSICS LETTERS, 1978, 33 (12) : 1028 - 1030

[5] OHDOMARI J, 1979, J APPL PHYS, V51, P7020

[6] INTERFACIAL REACTION AND SCHOTTKY-BARRIER IN METAL-SILICON SYSTEMS [J]. PHYSICAL REVIEW LETTERS, 1980, 44 (04) : 284 - 287

[7] SALTICK J, 1969, OHMIC CONTACT SEMICO, P167

[8] SOLOMAN P, COMMUNICATION

[9] THOMPSON RD, 1979, RC7989 IBM RES

[10] [No title captured]

[1] ROLE OF METAL-SEMICONDUCTOR INTERFACE IN SILICON INTEGRATED-CIRCUIT TECHNOLOGY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (06): : 972 - 984

[2] THE FORMATION OF SILICIDES FROM THIN-FILMS OF SOME RARE-EARTH-METALS [J]. APPLIED PHYSICS LETTERS, 1980, 36 (07) : 594 - 596

[3] MOFFATT WG, 1978, BINARY PHASE DIAGRAM

[4] SCHOTTKY-BARRIER HEIGHT OF IRIDIUM SILICIDE [J]. APPLIED PHYSICS LETTERS, 1978, 33 (12) : 1028 - 1030

[5] OHDOMARI J, 1979, J APPL PHYS, V51, P7020

[6] INTERFACIAL REACTION AND SCHOTTKY-BARRIER IN METAL-SILICON SYSTEMS [J]. PHYSICAL REVIEW LETTERS, 1980, 44 (04) : 284 - 287

[7] SALTICK J, 1969, OHMIC CONTACT SEMICO, P167

[8] SOLOMAN P, COMMUNICATION

[9] THOMPSON RD, 1979, RC7989 IBM RES

[10] [No title captured]