CONTACT REACTION BETWEEN SI AND RARE-EARTH-METALS

[1] [Anonymous], 1978, HDB BINARY PHASE DIA

[2] THE FORMATION OF SILICIDES FROM THIN-FILMS OF SOME RARE-EARTH-METALS [J]. APPLIED PHYSICS LETTERS, 1980, 36 (07) : 594 - 596

[3] GROWTH KINETICS OBSERVED IN FORMATION OF METAL SILICIDES ON SILICON [J]. APPLIED PHYSICS LETTERS, 1972, 20 (09) : 359 - &

[4] SILICIDE FORMATION AND INTERDIFFUSION EFFECTS IN SI-TA, SIO2-TA AND SI-PTSI-TA THIN-FILM STRUCTURES [J]. JOURNAL OF ELECTRONIC MATERIALS, 1976, 5 (01) : 1 - 12

[5] KRAUTLE H, 1974, P INT C APPLICATIONS, P193

[6] REACTION-KINETICS OF TUNGSTEN THIN-FILMS ON SILICON (100) SURFACES [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (10) : 4366 - 4369

[7] SILICIDE FORMATION IN THIN MOLYBDENUM AND TUNGSTEN FILMS ON SINGLE-CRYSTAL SILICON SUBSTRATES AT RELATIVELY LOW-TEMPERATURES [J]. THIN SOLID FILMS, 1976, 37 (02) : 185 - 194

[8] THOMPSON RD, 1979, RC7989 IBM REP

[9] Tu K. N., 1978, THIN FILMS INTERDIFF

[10] FORMATION OF VANADIUM SILICIDES BY INTERACTIONS OF V WITH BARE AND OXIDIZED SI WAFERS [J]. APPLIED PHYSICS LETTERS, 1973, 23 (09) : 493 - 495

[1] [Anonymous], 1978, HDB BINARY PHASE DIA

[2] THE FORMATION OF SILICIDES FROM THIN-FILMS OF SOME RARE-EARTH-METALS [J]. APPLIED PHYSICS LETTERS, 1980, 36 (07) : 594 - 596

[3] GROWTH KINETICS OBSERVED IN FORMATION OF METAL SILICIDES ON SILICON [J]. APPLIED PHYSICS LETTERS, 1972, 20 (09) : 359 - &

[4] SILICIDE FORMATION AND INTERDIFFUSION EFFECTS IN SI-TA, SIO2-TA AND SI-PTSI-TA THIN-FILM STRUCTURES [J]. JOURNAL OF ELECTRONIC MATERIALS, 1976, 5 (01) : 1 - 12

[5] KRAUTLE H, 1974, P INT C APPLICATIONS, P193

[6] REACTION-KINETICS OF TUNGSTEN THIN-FILMS ON SILICON (100) SURFACES [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (10) : 4366 - 4369

[7] SILICIDE FORMATION IN THIN MOLYBDENUM AND TUNGSTEN FILMS ON SINGLE-CRYSTAL SILICON SUBSTRATES AT RELATIVELY LOW-TEMPERATURES [J]. THIN SOLID FILMS, 1976, 37 (02) : 185 - 194

[8] THOMPSON RD, 1979, RC7989 IBM REP

[9] Tu K. N., 1978, THIN FILMS INTERDIFF

[10] FORMATION OF VANADIUM SILICIDES BY INTERACTIONS OF V WITH BARE AND OXIDIZED SI WAFERS [J]. APPLIED PHYSICS LETTERS, 1973, 23 (09) : 493 - 495