MONOLAYER BE DELTA-DOPED HETEROSTRUCTURE BIPOLAR-TRANSISTOR FABRICATED USING DOPING SELECTIVE BASE CONTACT

被引：3

作者：

KUO, TY ^{[1
]}

CUNNINGHAM, JE ^{[1
]}

GOOSSEN, KW ^{[1
]}

JAN, WY ^{[1
]}

FONSTAD, CG ^{[1
]}

REN, F ^{[1
]}

机构：

[1] MIT,HOLMDEL,NJ 07733

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 15期

关键词：

Doping; Semiconductor devices and materials;

D O I：

10.1049/el:19900768

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A heterostructure bipolar transistor (HBT) with a base δ-doping of 6 x 1014cm-2, near the physical limit of one monolayer (ML) is reported. The devices exhibits a current gain of 15. The doping confinement of the δ layer is 15 Å. To fabricate the HBT without inducing dopant diffusion or using sensitive etching, a new low-temperature base-contacting procedure (Tmax = 420°C) which requires no base-emitter etching has been development. This has the additional benefits of greatly reducing surface recombination and yielding a planar structure. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：1187 / 1188

页数：2

共 7 条

[1]

GOOSSEN KW, 1989, P IEDM, P409

[2] SIMPLE EMPIRICAL RELATIONSHIP BETWEEN MOBILITY AND CARRIER CONCENTRATION [J].