KINETICS OF RECOVERY OF THE LIGHT-INDUCED DEFECTS IN HYDROGENATED AMORPHOUS-SILICON UNDER ILLUMINATION

The results of a study of the kinetics of the light-induced annealing of defects in hydrogenated amorphous silicon (a-Si:H) are presented. Our results show that at temperatures between 92 and 152-degrees-C illumination increases the rate of annealing compared to annealing in the dark. The rates of annealing in the dark and under illumination exhibit the same functional dependence on the defect density. This observation suggests that the mechanisms for ''dark'' and ''light'' annealing are identical.