SEMICONDUCTOR SUPERLATTICES WITH PERIODIC DISORDER

[1] RESONANT TUNNELING IN SEMICONDUCTOR DOUBLE BARRIERS [J]. APPLIED PHYSICS LETTERS, 1974, 24 (12) : 593 - 595

[2] EFFECT OF LAYER-THICKNESS FLUCTUATIONS ON SUPERLATTICE DIFFRACTION [J]. PHYSICAL REVIEW B, 1987, 35 (17): : 9337 - 9340

[3] QUANTUM STATES OF CONFINED CARRIERS IN VERY THIN ALXGA1-XAS-GAAS-ALXGA1-XAS HETEROSTRUCTURES [J]. PHYSICAL REVIEW LETTERS, 1974, 33 (14) : 827 - 830

[4] SUPERLATTICE AND NEGATIVE DIFFERENTIAL CONDUCTIVITY IN SEMICONDUCTORS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (01) : 61 - &

[5] EFFECT OF MAGNETIC-FIELD ON THE ENERGY-LEVELS OF A HYDROGENIC IMPURITY CENTER IN GAAS GA1-XALXAS QUANTUM-WELL STRUCTURES [J]. PHYSICAL REVIEW B, 1985, 31 (02): : 913 - 918

[6] GREENE RL, 1984, PHYS REV B, V31, P91

[7] INTERFACE DISORDER IN GAAS/ALGAAS QUANTUM WELLS GROWN BY MOLECULAR-BEAM EPITAXY AT HIGH SUBSTRATE-TEMPERATURE [J]. APPLIED PHYSICS LETTERS, 1985, 47 (09) : 952 - 954

[8] BAND-STRUCTURE OF SUPERLATTICE WITH GRADED INTERFACES [J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (02) : 624 - 628

[9] JIANG HX, 1987, 3RD INT C SUP MICR M

[10] ELECTRON-TRANSPORT AND BAND-STRUCTURE OF GA1-XALXAS ALLOYS [J]. PHYSICAL REVIEW B, 1980, 21 (02) : 659 - 669

[1] RESONANT TUNNELING IN SEMICONDUCTOR DOUBLE BARRIERS [J]. APPLIED PHYSICS LETTERS, 1974, 24 (12) : 593 - 595

[2] EFFECT OF LAYER-THICKNESS FLUCTUATIONS ON SUPERLATTICE DIFFRACTION [J]. PHYSICAL REVIEW B, 1987, 35 (17): : 9337 - 9340

[3] QUANTUM STATES OF CONFINED CARRIERS IN VERY THIN ALXGA1-XAS-GAAS-ALXGA1-XAS HETEROSTRUCTURES [J]. PHYSICAL REVIEW LETTERS, 1974, 33 (14) : 827 - 830

[4] SUPERLATTICE AND NEGATIVE DIFFERENTIAL CONDUCTIVITY IN SEMICONDUCTORS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (01) : 61 - &

[5] EFFECT OF MAGNETIC-FIELD ON THE ENERGY-LEVELS OF A HYDROGENIC IMPURITY CENTER IN GAAS GA1-XALXAS QUANTUM-WELL STRUCTURES [J]. PHYSICAL REVIEW B, 1985, 31 (02): : 913 - 918

[6] GREENE RL, 1984, PHYS REV B, V31, P91

[7] INTERFACE DISORDER IN GAAS/ALGAAS QUANTUM WELLS GROWN BY MOLECULAR-BEAM EPITAXY AT HIGH SUBSTRATE-TEMPERATURE [J]. APPLIED PHYSICS LETTERS, 1985, 47 (09) : 952 - 954

[8] BAND-STRUCTURE OF SUPERLATTICE WITH GRADED INTERFACES [J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (02) : 624 - 628

[9] JIANG HX, 1987, 3RD INT C SUP MICR M

[10] ELECTRON-TRANSPORT AND BAND-STRUCTURE OF GA1-XALXAS ALLOYS [J]. PHYSICAL REVIEW B, 1980, 21 (02) : 659 - 669